? 2008 ixys corporation, all rights reserved ds99893a(4/08) v dss = 1000v i d25 = 22a r ds(on) 240 m t rr 300 ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c22a i dm t c = 25 c, pulse width limited by t jm 110 a i ar t c = 25 c22a e as t c = 25 c2j dv/dt i s i dm , v dd v dss ,t j 150 c 15 v/ns p d t c = 25 c 357 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms, 1 minute 2500 v~ i isol 1ma t = 1s 3000 v~ f c mounting force 40..120/4.5..27 n/lb. weight 8g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 1000 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 3 ma r ds(on) v gs = 10v, i d = 22a, note 1 240 m IXFL44N100P polar tm power mosfet hiperfet tm g = gate s = source d = drain features ? silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation ? low drain to tab capacitance(<30pf) ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? fast intrinsic rectifier applications ? switched-mode and resonant-mode power supplies ? dc-dc converters ? laser drivers ? ac and dc motor controls ? robotics and servo controls advantages ? easy assembly ? space savings ? high power density isoplus i5-pak tm (hv) g s d
ixys reserves the right to change limits, test conditions, and dimensions. IXFL44N100P symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 22a, note 1 20 35 s c iss 19 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1060 pf c rss 41 pf r gi gate input resistance 1.70 t d(on) resistive switching times 60 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 22a 68 ns t d(off) r g = 1 (external) 90 ns t f 54 ns q g(on) 305 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 22a 104 nc q gd 125 nc r thjc 0.35 c /w r thcs 0.15 c /w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 44 a i sm repetitive, pulse width limited by t jm 176 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 2.5 c i rm 17 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. i f = 22a, -di/dt = 100a/ s v r = 100v, v gs = 0v isoplus i5-pak tm hv (ixfl) outline note: bottom heatsink meets 2500 vrms isolation to the other pins.
? 2008 ixys corporation, all rights reserved fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 01234567891011 v ds - volts i d - amperes v gs = 10v 9v 7v 8v fig. 2. extended output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 9v 7v 8v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 1012141618202224 v ds - volts i d - amperes v gs = 10v 8v 7v 6v fig. 4. r ds(on) normalized to i d = 22a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 44a i d = 22a fig. 5. r ds(on) normalized to i d = 22a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 102030405060708090 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes IXFL44N100P
ixys reserves the right to change limits, test conditions, and dimensions. IXFL44N100P ixys ref: f_44n100p(97)4-01-08-d fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 55.566.577.5 88.59 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 25 30 35 40 45 50 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 q g - nanocoulombs v gs - volts v ds = 500v i d = 22a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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